New nano-transistor demonstrated
Researchers have created the highest reported drive current on a transistor, using a newly developed monolayer tungsten diselenide channel material.
The demonstration of the two-dimensional material also marked the first showing of an “n-type” field-effect transistor, heralding the massive potential for future high-performing low-power devices.
Monolayer tungsten diselenide (WSe2) is similar in structure to graphene, which is currently being tested for a variety of similar applications. However, WSe2 has the distinct advantage of atomically smooth surfaces and a band gap of 1.6 eV, prompting worldwide interest in its use for the next generation of integrated electronics, optoelectronics and sensors.
The substance is being pioneered by researchers and engineers at the California NanoSystems Institute at UC Santa Barbara.